Self Assembly of semiconductor nanostructures

Autoensamblaje de nanoestructuras semiconductoras

Main Article Content

Máximo López-López
Esteban Cruz-Hernández
Isaac Martínez-Velis
Juan Salvador Rojas-Ramírez
Manolo Ramirez-Lopez
Álvaro Orlando Pulzara-Mora
Abstract

In this work we present the growth and characterization of GaAs self-assembled quantum wires (SAQWRs), and InAs self-assembled quantum dots (SAQDs) by molecular beam epitaxy on (631)-oriented GaAs substrates. Adatoms on the (631) crystal plane present a strong surface diffusion anisotropy which we use to induce preferential growth along one direction to produce SAQWRs. On the other hand, InAs SAQDs were obtained on GaAs(631) with SAQWRs by the Stransky–Krastanov (S-K) growth method. SAQDs grown directly on (631) substrates presented considerable fluctuations in size. We study the effects of growing a stressor layer before the SAQDs formation to reduce these fluctuations.

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Author Biographies (SEE)

Máximo López-López, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional

Physics Department

Esteban Cruz-Hernández, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional

Physics Department

Isaac Martínez-Velis, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional

Physics Department

Juan Salvador Rojas-Ramírez, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional

Physics Department

Manolo Ramirez-Lopez, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional

Physics Department
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