Morphological characterization of cu/cd thin films obtained by electrodeposition

Caracterización morfológica de películas delgadas de cu/cd obtenidas por electrodeposición

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William Arnulfo Aperador-Chaparro
Ariel Camargo-López
César Armando Ortiz-Otálora
Enrique Vera-López
Abstract

This work presents the use of the technique of current pulsant inverse, pulse direct current and direct current for electrodeposition thin films Cu/Cd in double-layer shape on Zamak substrate. The influence of the different variables was studied involved in each one of the processes: voltage and time of deposition (VHigh and VLow), voltage and time of breakup (VLow and tLow) and the load cycle ( =tHigh/tHigh+tLow), obtaining the average of the anodic (ILow) and cathodic (IHigh) currents as a function of the anodic (tLow) and cathodic (tHigh) times, respectively. The electrodeposits of Cu/Cd were characterized by means of optic microscopy to obtain the grain size; moreover the ruggedness was obtained using a Scanning Proved Image Processor (SPIP). These results showed that the control of pulsed voltage during the deposit allowing to obtain Cu/Cd films denser, and with a size of grain finer that the conventional films deposited by the technique of direct current. The protective anticorrosive power of the thin films was evaluated by means the technique TAFEL.

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Author Biographies (SEE)

William Arnulfo Aperador-Chaparro, Universidad Pedagógica y Tecnológica de Colombia

GRUPO DE SUPERFICIES ELECTROQUÍMICA Y CORROSIÓN. Escuela de Física, Facultad de Ciencias.

Ariel Camargo-López, Universidad Pedagógica y Tecnológica de Colombia

GRUPO DE SUPERFICIES ELECTROQUÍMICA Y CORROSIÓN. Escuela de Física, Facultad de Ciencias.

César Armando Ortiz-Otálora, Universidad Pedagógica y Tecnológica de Colombia

GRUPO DE SUPERFICIES ELECTROQUÍMICA Y CORROSIÓN. Escuela de Física, Facultad de Ciencias.

Enrique Vera-López, Universidad Pedagógica y Tecnológica de Colombia

GRUPO DE SUPERFICIES ELECTROQUÍMICA Y CORROSIÓN. Escuela de Física, Facultad de Ciencias.
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